WNSC5D086506Q
| ： | WNSC5D086506Q |
|---|---|
| ： | Single Diodes |
| ： | WeEn Semiconductors Co., Ltd |
| ： | DIODE SIL CARB |
| ： | - |
| ： | Tube |
| ： | 120 |
| ： | |
WNSC5D086506Q
:
WNSC5D086506Q
Manufacturer:
WeEn Semiconductors Co., Ltd
Package:
Tube
Encapsulation:
Batch number:
Quantity:
120
Pricing(UCD):
Product parameters
| TYPE | DESCRIPTION |
| Mfr | WeEn Semiconductors Co., Ltd |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 267pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
关闭
