WNSC2D12650TJ
| ： | WNSC2D12650TJ |
|---|---|
| ： | Single Diodes |
| ： | WeEn Semiconductors Co., Ltd |
| ： | DIODE SIL CARBI |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 3105 |
| ： | |
WNSC2D12650TJ
:
WNSC2D12650TJ
Manufacturer:
WeEn Semiconductors Co., Ltd
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
3105
Pricing(UCD):
1+:
$6.8000
$6.8000
10+:
$5.7000
$57.0000
100+:
$4.6200
$462.0000
500+:
$4.1000
$2,050.0000
1000+:
$3.5200
$3,520.0000
3000+:
$3.3000
$9,900.0000
6000+:
$3.1800
$19,080.0000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | WeEn Semiconductors Co., Ltd |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
: 3105
1
$6.8000
$6.8000
10
$5.7000
$57.0000
100
$4.6200
$462.0000
500
$4.1000
$2,050.0000
1000
$3.5200
$3,520.0000
3000
$3.3000
$9,900.0000
6000
$3.1800
$19,080.0000
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