UPA810T-T1-A

  • image of Bipolar RF Transistors>UPA810T-T1-A
  • image of Bipolar RF Transistors>UPA810T-T1-A
UPA810T-T1-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
NPN SILICON AMP
-
Tape & Reel (TR)
27120
1
UPA810T-T1-A
:
UPA810T-T1-A
Manufacturer:
CEL (California Eastern Laboratories)
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
27120
Pricing(UCD):
3000+:
$4.0000
$12,000.0000
9000+:
$3.2000
$28,800.0000
15000+:
$2.8000
$42,000.0000
Product parameters
TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageTape & Reel (TR)
Product StatusOBSOLETE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain9dB
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 7mA, 3V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.2dB @ 1GHz
Supplier Device Package6-SuperMiniMold
: 27120

3000

$4.0000

$12,000.0000

9000

$3.2000

$28,800.0000

15000

$2.8000

$42,000.0000

image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC XO 133.0000MHZ CMOS SMD
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC XO 24.5760MHZ CMOS SMD
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC XO 100.0000MHZ LVPECL
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC XO 125.0000MHZ LVPECL
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSCILLATOR, ULTRA LOW POWER
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC XO 133.3330MHZ CMOS SMD
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC XO 175.0000MHZ LVDS SMD
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC LOW JITTER 125MHZ LVDS
image of Bipolar RF Transistors>UPA810T-T1-A
MEMS OSC XO 32.0000MHZ CMOS SMD
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