: | TP65H070LSG |
---|---|
: | Single FETs, MOSFETs |
: | Transphorm |
: | GANFET N-CH 650 |
: | - |
: | Tube |
: | 120 |
: | |
TYPE | DESCRIPTION |
Mfr | Transphorm |
Series | TP65H070L |
Package | Tube |
Product Status | DISCONTINUED |
Package / Case | 3-PowerDFN |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | GaNFET (Cascode Gallium Nitride FET) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
Power Dissipation (Max) | 96W (Tc) |
Vgs(th) (Max) @ Id | 4.8V @ 700µA |
Supplier Device Package | 3-PQFN (8x8) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |