NXH003P120M3F2PTNG
| ： | NXH003P120M3F2PTNG |
|---|---|
| ： | FET, MOSFET Arrays |
| ： | Sanyo Semiconductor/onsemi |
| ： | SILICON CARBIDE |
| ： | - |
| ： | Tray |
| ： | 140 |
| ： | 1 |
NXH003P120M3F2PTNG
:
NXH003P120M3F2PTNG
Manufacturer:
Sanyo Semiconductor/onsemi
Package:
Tray
Encapsulation:
Batch number:
Quantity:
140
Pricing(UCD):
1+:
$517.4400
$517.4400
20+:
$484.6400
$9,692.8000
40+:
$466.4200
$18,656.8000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.48kW (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 435A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 20889pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 200A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 1200nC @ 20V |
| Vgs(th) (Max) @ Id | 4.4V @ 160mA |
| Supplier Device Package | 36-PIM (56.7x62.8) |
: 140
1
$517.4400
$517.4400
20
$484.6400
$9,692.8000
40
$466.4200
$18,656.8000
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