K6F3216U6M-EF70T

  • image of Memory>K6F3216U6M-EF70T
  • image of Memory>K6F3216U6M-EF70T
K6F3216U6M-EF70T
Memory
Samsung Semiconductor
SRAM ASYNC SLOW
-
Tape & Reel (TR)
920
K6F3216U6M-EF70T
:
K6F3216U6M-EF70T
Manufacturer:
Samsung Semiconductor
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
920
Pricing(UCD):
100+:
$15.0000
$1,500.0000
Product parameters
TYPEDESCRIPTION
MfrSamsung Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusOBSOLETE
Mounting TypeSurface Mount
Memory Size32Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package55-TFBGA (7.5x12)
Write Cycle Time - Word, Page70ns
Memory InterfaceParallel
Memory Organization2M x 16
DigiKey ProgrammableNot Verified
: 920

100

$15.0000

$1,500.0000

image of Memory>K6F3216U6M-EF70T
MEMS OSC XO 133.0000MHZ CMOS SMD
image of Memory>K6F3216U6M-EF70T
MEMS OSC XO 24.5760MHZ CMOS SMD
image of Memory>K6F3216U6M-EF70T
MEMS OSC XO 100.0000MHZ LVPECL
image of Memory>K6F3216U6M-EF70T
MEMS OSC XO 125.0000MHZ LVPECL
image of Memory>K6F3216U6M-EF70T
MEMS OSCILLATOR, ULTRA LOW POWER
image of Memory>K6F3216U6M-EF70T
MEMS OSC XO 133.3330MHZ CMOS SMD
image of Memory>K6F3216U6M-EF70T
MEMS OSC XO 175.0000MHZ LVDS SMD
image of Memory>K6F3216U6M-EF70T
MEMS OSC LOW JITTER 125MHZ LVDS
image of Memory>K6F3216U6M-EF70T
MEMS OSC XO 32.0000MHZ CMOS SMD
关闭

+86-19926599677

点击这里给我发消息
0