K6F2016U4E-EF70T

  • image of Memory>K6F2016U4E-EF70T
  • image of Memory>K6F2016U4E-EF70T
K6F2016U4E-EF70T
Memory
Samsung Semiconductor
SRAM ASYNC SLOW
-
Tape & Reel (TR)
2247
K6F2016U4E-EF70T
:
K6F2016U4E-EF70T
Manufacturer:
Samsung Semiconductor
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
2247
Pricing(UCD):
100+:
$3.2000
$320.0000
500+:
$2.9000
$1,450.0000
2000+:
$2.6000
$5,200.0000
Product parameters
TYPEDESCRIPTION
MfrSamsung Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusOBSOLETE
Mounting TypeSurface Mount
Memory Size2Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package48-TFBGA (6x7)
Write Cycle Time - Word, Page70ns
Memory InterfaceParallel
Memory Organization128K x 16
DigiKey ProgrammableNot Verified
: 2247

100

$3.2000

$320.0000

500

$2.9000

$1,450.0000

2000

$2.6000

$5,200.0000

image of Memory>K6F2016U4E-EF70T
MEMS OSC XO 133.0000MHZ CMOS SMD
image of Memory>K6F2016U4E-EF70T
MEMS OSC XO 24.5760MHZ CMOS SMD
image of Memory>K6F2016U4E-EF70T
MEMS OSC XO 100.0000MHZ LVPECL
image of Memory>K6F2016U4E-EF70T
MEMS OSC XO 125.0000MHZ LVPECL
image of Memory>K6F2016U4E-EF70T
MEMS OSCILLATOR, ULTRA LOW POWER
image of Memory>K6F2016U4E-EF70T
MEMS OSC XO 133.3330MHZ CMOS SMD
image of Memory>K6F2016U4E-EF70T
MEMS OSC XO 175.0000MHZ LVDS SMD
image of Memory>K6F2016U4E-EF70T
MEMS OSC LOW JITTER 125MHZ LVDS
image of Memory>K6F2016U4E-EF70T
MEMS OSC XO 32.0000MHZ CMOS SMD
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