K6E0808C1E-JC15000

  • image of Memory>K6E0808C1E-JC15000
  • image of Memory>K6E0808C1E-JC15000
K6E0808C1E-JC15000
Memory
Samsung Semiconductor
SRAM ASYNC FAST
-
Tube
3546
K6E0808C1E-JC15000
:
K6E0808C1E-JC15000
Manufacturer:
Samsung Semiconductor
Package:
Tube
Encapsulation:
Batch number:
Quantity:
3546
Pricing(UCD):
1000+:
$2.0000
$2,000.0000
3000+:
$1.8000
$5,400.0000
Product parameters
TYPEDESCRIPTION
MfrSamsung Semiconductor
Series-
PackageTube
Product StatusOBSOLETE
Mounting TypeSurface Mount
Memory Size256Kbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply5V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package28-SOJ
Write Cycle Time - Word, Page15ns
Memory InterfaceParallel
Memory Organization32K x 8
DigiKey ProgrammableNot Verified
: 3546

1000

$2.0000

$2,000.0000

3000

$1.8000

$5,400.0000

image of Memory>K6E0808C1E-JC15000
MEMS OSC XO 133.0000MHZ CMOS SMD
image of Memory>K6E0808C1E-JC15000
MEMS OSC XO 24.5760MHZ CMOS SMD
image of Memory>K6E0808C1E-JC15000
MEMS OSC XO 100.0000MHZ LVPECL
image of Memory>K6E0808C1E-JC15000
MEMS OSC XO 125.0000MHZ LVPECL
image of Memory>K6E0808C1E-JC15000
MEMS OSCILLATOR, ULTRA LOW POWER
image of Memory>K6E0808C1E-JC15000
MEMS OSC XO 133.3330MHZ CMOS SMD
image of Memory>K6E0808C1E-JC15000
MEMS OSC XO 175.0000MHZ LVDS SMD
image of Memory>K6E0808C1E-JC15000
MEMS OSC LOW JITTER 125MHZ LVDS
image of Memory>K6E0808C1E-JC15000
MEMS OSC XO 32.0000MHZ CMOS SMD
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