IRF6643TRPBFXTMA1
| ： | IRF6643TRPBFXTMA1 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | IR (Infineon Technologies) |
| ： | TRENCH >=100V |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 120 |
| ： | 1 |
IRF6643TRPBFXTMA1
:
IRF6643TRPBFXTMA1
Manufacturer:
IR (Infineon Technologies)
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
120
Pricing(UCD):
4800+:
$1.9000
$9,120.0000
9600+:
$1.8400
$17,664.0000
Product parameters
| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 34.5mOhm @ 7.6A, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DirectFET™ Isometric MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
: 120
4800
$1.9000
$9,120.0000
9600
$1.8400
$17,664.0000
关闭
