IMBG65R015M2HXTMA1
| ： | IMBG65R015M2HXTMA1 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | IR (Infineon Technologies) |
| ： | SILICON CARBIDE |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 120 |
| ： | 1 |
IMBG65R015M2HXTMA1
:
IMBG65R015M2HXTMA1
Manufacturer:
IR (Infineon Technologies)
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
120
Pricing(UCD):
1+:
$42.7000
$42.7000
10+:
$39.3800
$393.8000
25+:
$37.6200
$940.5000
100+:
$33.6400
$3,364.0000
250+:
$32.0800
$8,020.0000
500+:
$30.5400
$15,270.0000
1000+:
$28.7600
$28,760.0000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | CoolSiC™ Gen 2 |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 64.2A, 18V |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 13mA |
| Supplier Device Package | PG-TO263-7-12 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -7V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2792 pF @ 400 V |
: 120
1
$42.7000
$42.7000
10
$39.3800
$393.8000
25
$37.6200
$940.5000
100
$33.6400
$3,364.0000
250
$32.0800
$8,020.0000
500
$30.5400
$15,270.0000
1000
$28.7600
$28,760.0000
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