ICE20N170
| ： | ICE20N170 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | IceMOS Technology |
| ： | Superjunction M |
| ： | - |
| ： | Tube |
| ： | 270 |
| ： | |
ICE20N170
:
ICE20N170
Manufacturer:
IceMOS Technology
Package:
Tube
Encapsulation:
Batch number:
Quantity:
270
Pricing(UCD):
50+:
$5.0200
$251.0000
1000+:
$4.7000
$4,700.0000
5000+:
$4.3000
$21,500.0000
15000+:
$3.9600
$59,400.0000
25000+:
$3.6800
$92,000.0000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | IceMOS Technology |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| Power Dissipation (Max) | 236W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2064 pF @ 25 V |
: 270
50
$5.0200
$251.0000
1000
$4.7000
$4,700.0000
5000
$4.3000
$21,500.0000
15000
$3.9600
$59,400.0000
25000
$3.6800
$92,000.0000
关闭
