G2K2P10D3E
| ： | G2K2P10D3E |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Goford Semiconductor |
| ： | MOSFET P-CH ESD |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 5090 |
| ： | 1 |
G2K2P10D3E
:
G2K2P10D3E
Manufacturer:
Goford Semiconductor
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
5090
Pricing(UCD):
1+:
$1.1600
$1.1600
10+:
$0.9800
$9.8000
100+:
$0.6800
$68.0000
500+:
$0.5400
$270.0000
1000+:
$0.4400
$440.0000
2000+:
$0.3800
$760.0000
5000+:
$0.3600
$1,800.0000
10000+:
$0.3400
$3,400.0000
25000+:
$0.3400
$8,500.0000
50000+:
$0.3200
$16,000.0000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1668 pF @ 50 V |
: 5090
1
$1.1600
$1.1600
10
$0.9800
$9.8000
100
$0.6800
$68.0000
500
$0.5400
$270.0000
1000
$0.4400
$440.0000
2000
$0.3800
$760.0000
5000
$0.3600
$1,800.0000
10000
$0.3400
$3,400.0000
25000
$0.3400
$8,500.0000
50000
$0.3200
$16,000.0000
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