CGD65B200S2-T13
| ： | CGD65B200S2-T13 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Cambridge GaN Devices |
| ： | 650V GAN HEMT, |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 4475 |
| ： | 1 |
CGD65B200S2-T13
:
CGD65B200S2-T13
Manufacturer:
Cambridge GaN Devices
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
4475
Pricing(UCD):
1+:
$9.1000
$9.1000
10+:
$7.6400
$76.4000
100+:
$6.1800
$618.0000
500+:
$5.5000
$2,750.0000
1000+:
$4.7000
$4,700.0000
2000+:
$4.4200
$8,840.0000
5000+:
$4.2600
$21,300.0000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
: 4475
1
$9.1000
$9.1000
10
$7.6400
$76.4000
100
$6.1800
$618.0000
500
$5.5000
$2,750.0000
1000
$4.7000
$4,700.0000
2000
$4.4200
$8,840.0000
5000
$4.2600
$21,300.0000
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