CGD65A130S2-T13
| ： | CGD65A130S2-T13 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Cambridge GaN Devices |
| ： | 650V GAN HEMT, |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 3472 |
| ： | 1 |
CGD65A130S2-T13
:
CGD65A130S2-T13
Manufacturer:
Cambridge GaN Devices
Package:
Tape & Reel (TR)
Encapsulation:
Batch number:
Quantity:
3472
Pricing(UCD):
1+:
$12.5000
$12.5000
10+:
$10.7200
$107.2000
100+:
$8.9200
$892.0000
500+:
$7.8800
$3,940.0000
1000+:
$7.1000
$7,100.0000
3500+:
$6.6400
$23,240.0000
Product parameters
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 16-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 16-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
: 3472
1
$12.5000
$12.5000
10
$10.7200
$107.2000
100
$8.9200
$892.0000
500
$7.8800
$3,940.0000
1000
$7.1000
$7,100.0000
3500
$6.6400
$23,240.0000
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