BYV410X-600/L01Q

  • image of Diode Arrays>BYV410X-600/L01Q
  • image of Diode Arrays>BYV410X-600/L01Q
BYV410X-600/L01Q
Diode Arrays
WeEn Semiconductors Co., Ltd
DIODE ARRAY GP
-
Bulk
120
BYV410X-600/L01Q
:
BYV410X-600/L01Q
Manufacturer:
WeEn Semiconductors Co., Ltd
Package:
Bulk
Encapsulation:
Batch number:
Quantity:
120
Pricing(UCD):
3600+:
$1.3400
$4,824.0000
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrWeEn Semiconductors Co., Ltd
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)20A
Supplier Device PackageTO-220F
Operating Temperature - Junction150°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2.1 V @ 10 A
Current - Reverse Leakage @ Vr50 µA @ 600 V
: 120

3600

$1.3400

$4,824.0000

image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC XO 133.0000MHZ CMOS SMD
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC XO 24.5760MHZ CMOS SMD
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC XO 100.0000MHZ LVPECL
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC XO 125.0000MHZ LVPECL
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSCILLATOR, ULTRA LOW POWER
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC XO 133.3330MHZ CMOS SMD
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC XO 175.0000MHZ LVDS SMD
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC LOW JITTER 125MHZ LVDS
image of Diode Arrays>BYV410X-600/L01Q
MEMS OSC XO 32.0000MHZ CMOS SMD
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