AS2M040120P
| ： | AS2M040120P |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Anbon Semiconductor |
| ： | N-CHANNEL SILIC |
| ： | - |
| ： | Bulk |
| ： | 170 |
| ： | 1 |
AS2M040120P
:
AS2M040120P
Manufacturer:
Anbon Semiconductor
Package:
Bulk
Encapsulation:
Batch number:
Quantity:
170
Pricing(UCD):
1+:
$41.3800
$41.3800
10+:
$36.7800
$367.8000
100+:
$32.1600
$3,216.0000
500+:
$27.4400
$13,720.0000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Anbon Semiconductor |
| Series | - |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2946 pF @ 1000 V |
: 170
1
$41.3800
$41.3800
10
$36.7800
$367.8000
100
$32.1600
$3,216.0000
500
$27.4400
$13,720.0000
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