AS1M025120P
| ： | AS1M025120P |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Anbon Semiconductor |
| ： | N-CHANNEL SILIC |
| ： | - |
| ： | Tube |
| ： | 244 |
| ： | 1 |
AS1M025120P
:
AS1M025120P
Manufacturer:
Anbon Semiconductor
Package:
Tube
Encapsulation:
Batch number:
Quantity:
244
Pricing(UCD):
1+:
$76.0600
$76.0600
10+:
$67.6000
$676.0000
100+:
$59.1200
$5,912.0000
Product parameters
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Anbon Semiconductor |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Power Dissipation (Max) | 463W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 1000 V |
: 244
1
$76.0600
$76.0600
10
$67.6000
$676.0000
100
$59.1200
$5,912.0000
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