2SC2839E-SPA-AC

  • image of Bipolar RF Transistors>2SC2839E-SPA-AC
  • image of Bipolar RF Transistors>2SC2839E-SPA-AC
2SC2839E-SPA-AC
Bipolar RF Transistors
Sanyo Semiconductor/onsemi
NPN EPITAXIAL P
-
Bulk
11820
2SC2839E-SPA-AC
:
2SC2839E-SPA-AC
Manufacturer:
Sanyo Semiconductor/onsemi
Package:
Bulk
Encapsulation:
Batch number:
Quantity:
11820
Pricing(UCD):
6662+:
$0.1000
$666.2000
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageBulk
Product StatusACTIVE
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Gain25dB
Power - Max150mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)20V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1mA, 6V
Frequency - Transition320MHz
Noise Figure (dB Typ @ f)3dB @ 100MHz
Supplier Device Package3-SPA
: 11820

6662

$0.1000

$666.2000

image of Bipolar RF Transistors>2SC2839E-SPA-AC
MEMS OSC XO 133.0000MHZ CMOS SMD
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MEMS OSC XO 24.5760MHZ CMOS SMD
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MEMS OSC XO 100.0000MHZ LVPECL
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MEMS OSC XO 125.0000MHZ LVPECL
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MEMS OSCILLATOR, ULTRA LOW POWER
image of Bipolar RF Transistors>2SC2839E-SPA-AC
MEMS OSC XO 133.3330MHZ CMOS SMD
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MEMS OSC XO 175.0000MHZ LVDS SMD
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MEMS OSC LOW JITTER 125MHZ LVDS
image of Bipolar RF Transistors>2SC2839E-SPA-AC
MEMS OSC XO 32.0000MHZ CMOS SMD
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