1N4007C.B.O.
| ： | 1N4007C.B.O. |
|---|---|
| ： | Single Diodes |
| ： | EIC Semiconductor, Inc. |
| ： | DIODE GEN PURP |
| ： | - |
| ： | Bag |
| ： | 5120 |
| ： | 1 |
1N4007C.B.O.
:
1N4007C.B.O.
Manufacturer:
EIC Semiconductor, Inc.
Package:
Bag
Encapsulation:
Batch number:
Quantity:
5120
Pricing(UCD):
5000+:
$0.2600
$1,300.0000
Product parameters
| TYPE | DESCRIPTION |
| Mfr | EIC Semiconductor, Inc. |
| Series | - |
| Package | Bag |
| Product Status | ACTIVE |
| Package / Case | DO-204AL, DO-41, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-41 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
: 5120
5000
$0.2600
$1,300.0000
关闭
